ba779-2-v-gh vishay semiconductors 18109 12 3 document number 8 3322 rev. 1.0, 22-apr-10 for technical questions within your re gion, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com www.vishay.com 1 rf pin diodes - dual series features ? wide frequency range 10 mhz to 1 ghz ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? find out more about vishay?s automotive grade product requirements at: www.vishay.com/applications applications ? current controlled hf resistance in adjustable attenuators mechanical data case: sot-23 weight: approx. 8 .1 mg packaging codes/options: 1 8 /10 k per 13" reel ( 8 mm tape), 10 k/box 0 8 /3 k per 7" reel ( 8 mm tape), 15 k/box parts table absolute maximum ratings t amb = 25 c, unless otherwise specified thermal characteristics t amb = 25 c, unless otherwise specified ** please see document ?vishay material category policy?: www.vishay.com/doc?99902 part ordering code type marking remarks ba779-2-v-gh ba779-2-v-gh-1 8 or ba779-2-v-gh-0 8 ph2 tape and reel parameter test condition symbol value unit reverse voltage v r 30 v forward continuous current i f 50 ma parameter test condition symbol value unit thermal resistance junction to ambient air on pc board 50 mm x 50 mm x 1.6 mm r thja 500 k/w junction temperature t j 125 c storage temperature range t stg - 55 to + 125 c
ba779-2-v-gh vishay semiconductors www.vishay.com for technical questions within your region, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com document number 8 3322 rev. 1.0, 22-apr-10 2 electrical characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c, unless otherwise specified parameter test condition symbol min. ty p. max. unit forward voltage i f = 20 ma v f 1000 mv reverse current v r = 30 v i r 50 na diode capacitance f = 100 mhz, v r = 0 c d 0.5 pf differential forward resistance f = 100 mhz, i f = 1.5 ma r f 50 reverse impedance f = 100 mhz, v r = 0 z r 5k minority carrier lifetime i f = 10 ma, i r = 10 ma 4s figure 1. forward current vs. forward voltage figure 2. differential forward resistance vs. forward current 0 0.4 0.8 1.2 1.6 0.01 0.1 1 10 100 2.0 95 9735 i - for w ard c u rrent (ma) f v f - for w ard v oltage ( v ) t am b = 25 c scattering limit 0.001 0.01 0.1 1 1 10 100 1000 10 000 10 95 9734 i f - for w ard c u rrent (ma) f > 20 mhz t j = 25 c r f - differential for w ard resistance ( ) figure 3. typ. cross modulat ion distortion vs. frequency f 2 - 80 - 60 - 40 - 20 0 20 a - typical cross mod u lation distortion (db) f 2 , mod u lated w ith 200 khz, m = 100 % (mhz) 80 60 40 20 0 95 9733 - circ u it w ith 10 db atten u ation v 0 =40dbm v f 1 = 100 mhz u nmod u lated
ba779-2-v-gh vishay semiconductors document number 8 3322 rev. 1.0, 22-apr-10 for technical questions within your regi on, please contact one of the following: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com www.vishay.com 3 package dimensions in millimeter s (inches): sot-23 foot print recommendation: rev. 8 - date: 23.sept.2009 17418 document no.: 6.541-5014.01-4 0.9 (0.035) 1 (0.039) 0.9 (0.035) 1 (0.039) 1.43 (0.056) 0.45 (0.018) 0.35 (0.014) 2.8 (0.110) 3.1 (0.122) 0.45 (0.018) 0.35 (0.014) 0.45 (0.018) 0.35 (0.014) 0.1 (0.004) max. 2.35 (0.093) 2.6 (0.102) 0.175 (0.007) 0.098 (0.004) 1.15 (0.045) 0.9 (0.035) 1.20 (0.047) 0.95 (0.037) 0.95 (0.037) 2 (0.079) 0.7 (0.028) 0.9 (0.035) 0 to 8 0.2 (0.008) 0.3 (0.012) 0.5 (0.020) 0.550 ref. (0.022 ref.)
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